f20n50.pdf datasheet:

F20N5020A 500V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 500Vplanar technology which reduce the conduction loss, improve switchingI = 20.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard. TO-220F provides insulation voltage rated at 2000VRDS(on)TYP)=0.23RMS from all three terminals to external heatsink. TO-220F series complywith UL standards (File ref:E252906).2 Features Fast switching ESD improved capability Low on resistance(Rdson0.30) Low gate charge(Typ: 52nC) Low reverse transfer capacitances(Typ: 16pF) 100% single pulse avalanche energy test 100% VDS test3 Applications Used in various power switching circuit for systemminiaturization and higher efficiency. Power switch c