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mmbta92 mmbta92-l.pdf Principales características:

MMBTA92 SOT-23 PNP Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector High voltage transistor Low collector-emitter saturation voltage Simplified outline(SOT-23) Complementary to MMBTA42 (NPN) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -300 Collector - Emitter Voltage VCEO -300 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -500 mA Collector Power Dissipation PC 350 mW Thermal Resistance Junction to Ambient R JA 417 /W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 A IE=0 -300 Collector- emitter breakdown voltage VCEO Ic= -1 mA IB=0 -300 V Emitter - base breakdown

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