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ss8050 ss8050-l ss8050-h ss8050-j.pdf Principales características:

SS8050 SOT-23 NPN Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector Collector Current IC=1.5A Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 1.5 A Collector Dissipation PC 0.3 W Junction Temperature Tj 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC = 100 uA, I E = 0 40 V Collector-emitter breakdown voltage VCEO IC = 1mA , IB = 0 25 V Emitter-base Breakdown voltage VEBO IE = 100 uA, I C = 0 5 V Collector-base cut-off current ICBO VCB = 40 V , IE = 0 0.1 A Collector-emitter cut-off current ICEO VCE = 20 V , IB = 0 1 A Emitter-base cut-off current IEBO VEB = 5 V

Keywords - ALL TRANSISTORS. Principales características

 ss8050 ss8050-l ss8050-h ss8050-j.pdf Design, MOSFET, Power

 ss8050 ss8050-l ss8050-h ss8050-j.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ss8050 ss8050-l ss8050-h ss8050-j.pdf Database, Innovation, IC, Electricity