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cs4n60 a8hd.pdf Principales características:

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Silicon N-Channel Power MOSFET R CS4N60 A8HD General Description VDSS 600 V CS4N60 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features Fast Switching ESD Improved Capability Low Gate Charge (Typical Data 14.5nC) Low Reverse transfer capacitances(Typical 8.5pF) 100% Single Pulse avalanche energy Test Applications Power switch circuit of adaptor and charger. Absolute Tc= 25 unless otherwise specified Symbol Parameter Rating Units VDSS Drain-t

 

Keywords - ALL TRANSISTORS. Principales características

 cs4n60 a8hd.pdf Design, MOSFET, Power

 cs4n60 a8hd.pdf RoHS Compliant, Service, Triacs, Semiconductor

 cs4n60 a8hd.pdf Database, Innovation, IC, Electricity

 

 
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