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Spec. No. C391Q8-A Issued Date 2008.07.17 CYStech Electronics Corp. Revised Date 2014.03.05 Page No. 1/9 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MEP4435Q8 ID -13A 9.3m (typ.) RDSON(MAX)@VGS=-10V, ID=-10A 14m (typ.) RDSON(MAX)@VGS=-5V, ID=-7A 15m (typ.) RDSON(MAX)@VGS=-4.5V, ID=-5A Description The MEP4435Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating package Equivalent Circuit Outline MEP4435Q8 SOP-8 G Gate S

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