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June 2014 FCP104N60 N-Channel SuperFET II MOSFET 600 V, 37 A, 104 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 63 nC) and lower gate charge performance. This advanced technology Low Effective Output Capacitance (Typ. Coss(eff.) = 280 pF) is tailored to minimize conduction loss, provide superior 100% Avalanche Tested switching performance, and withstand extreme dv/dt rate and RoHS Compliant higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system Applications miniaturization and higher efficiency. Telecom / Sever Power Supplies I

 

Keywords - ALL TRANSISTORS. Principales características

 fcp104n60.pdf Design, MOSFET, Power

 fcp104n60.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fcp104n60.pdf Database, Innovation, IC, Electricity

 

 
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