Todos los transistores

fdd6n20tm.pdf Principales características:

November 2013 FDD6N20TM N-Channel UniFETTM MOSFET 200 V, 4.5 A, 800 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 600 m (Typ.) @ VGS = 10 V, ID = 2.3 A MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 4.7 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche en- Low Crss (Typ. 6.3 pF) ergy strength. This device family is suitable for switching power 100% Avalanche Tested converter applications such as power factor correction (PFC), RoHS Compliant flat panel display (FPD) TV power, ATX and electronic lamp bal- lasts. Applications LCD/LED/PDP TV Consumer Appliances Lighting Uninterruptible Power Supply D D G G S D-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise note

Keywords - ALL TRANSISTORS. Principales características

 fdd6n20tm.pdf Design, MOSFET, Power

 fdd6n20tm.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdd6n20tm.pdf Database, Innovation, IC, Electricity