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January 2015 FDMC0310AS N-Channel PowerTrench SyncFETTM 30 V, 21 A, 4.4 m Features General Description The FDMC0310AS has been designed to minimize losses in Max rDS(on) = 4.4 m at VGS = 10 V, ID = 19 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17.5 A package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This Advanced package and silicon combination for low rDS(on) and device has the added benefit of an efficient monolithic schottky high efficiency body diode. SyncFETTM Schottky Body Diode Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters 100% UIL tested Notebook Vcore/GPU low side switch RoHS Compliant Networking Point of Load low side switch Telecom secondary side rectification B

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 fdmc0310as.pdf Design, MOSFET, Power

 fdmc0310as.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdmc0310as.pdf Database, Innovation, IC, Electricity