fqb46n15 fqi46n15.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

fqb46n15 fqi46n15.pdf Principales características:

April 2000 TM QFET QFET QFET QFET FQB46N15 / FQI46N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 45.6A, 150V, RDS(on) = 0.042 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well 175 C maximum junction temperature rating suited for low voltage applications such as audio amplifire, high efficiency switching for DC/DC converters, and DC motor control, uninterrupted power supply. D D G