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fqd5n20ltf fqd5n20ltm fqd5n20l fqu5n20l.pdf Principales características:

fqd5n20ltf_fqd5n20ltm_fqd5n20l_fqu5n20lfqd5n20ltf_fqd5n20ltm_fqd5n20l_fqu5n20l

October 2008 QFET FQD5N20L / FQU5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology is especially tailored to minimize Fast switching on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation modes. These devices are Low level gate drive requirement allowing direct well suited for high efficiency switching DC/DC converters, operation from logic drivers switch mode power supplies, and motor control. RoHS Compliant D D G D-PAK I-PAK G

 

Keywords - ALL TRANSISTORS. Principales características

 fqd5n20ltf fqd5n20ltm fqd5n20l fqu5n20l.pdf Design, MOSFET, Power

 fqd5n20ltf fqd5n20ltm fqd5n20l fqu5n20l.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqd5n20ltf fqd5n20ltm fqd5n20l fqu5n20l.pdf Database, Innovation, IC, Electricity

 

 
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