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fqd6n40ctf fqd6n40ctm fqd6n40c fqu6n40c fqu6n40ctu.pdf Principales características:

fqd6n40ctf_fqd6n40ctm_fqd6n40c_fqu6n40c_fqu6n40ctufqd6n40ctf_fqd6n40ctm_fqd6n40c_fqu6n40c_fqu6n40ctu

October 2008 QFET FQD6N40C / FQU6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 400V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well RoHS Compliant suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. D D

 

Keywords - ALL TRANSISTORS. Principales características

 fqd6n40ctf fqd6n40ctm fqd6n40c fqu6n40c fqu6n40ctu.pdf Design, MOSFET, Power

 fqd6n40ctf fqd6n40ctm fqd6n40c fqu6n40c fqu6n40ctu.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqd6n40ctf fqd6n40ctm fqd6n40c fqu6n40c fqu6n40ctu.pdf Database, Innovation, IC, Electricity

 

 

 


 
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