sd1285.pdf datasheet:

HG RF POWER TRANSISTORSD1285SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR.30 MHz.12.5 VOLTS.COMMON EMITTER.GOLD METALLIZATION.IMD - 30 dB.P 20 W MIN. WITH 15 dB GAIN=OUT.380 4LFL (M113)epoxy sealedORDER CODE BRANDINGSD1285 SD1285PIN CONNECTIONDESCRIPTIONThe SD1285 is a 12.5 V epitaxial NPN planartransistor designed primarily for SSB communica-tions. This device utilizes emitter ballasting to1. Collector 3. Baseachieve extreme ruggedness under severe oper-2. Emitter 4. Emitterating conditions.ABSOLUTE MAXIMUM RATINGS (T = 25C)caseSymbol Parameter Value UnitV Collector-Base Voltage 36 VCBOV Collector-Emitter Voltage 18 VCEOV Emitter-Base Voltage 4.0 VEBOI Device Current 4.5 ACP Power Dissipation 80 WDISSCT Junction Temperature +200JCT Storage Temperature - 65 to +150STGTHERMAL