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Spec. No. HE6630 HI-SINCERITY Issued Date 1995.12.18 Revised Date 2006.07.27 MICROELECTRONICS CORP. Page No. 1/4 HSD669A NPN Epitaxial Planar Transistor Description Low frequency power amplifier complementary pair with HSB649A TO-126ML Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature.............................................................................................................................................. -55 +150 C Junction Temperature...................................................................................................................................... +150 C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25 C) ........................................................................................................................................ 1 W Total Power Dissipat

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