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MMBTA56 TRANSISTOR(PNP) SOT 23 FEATURES General Purpose Amplifier Applications MARKING 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltage -80 V CEO VEBO Emitter-Base Voltage -4 V IC Collector Current -500 mA P Collector Power Dissipation 225 mW C R Thermal Resistance From Junction To Ambient 555 /W JA T Junction Temperature 150 j T Storage Temperature -55 +150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =-100 A, I =0 -80 V (BR)CBO C E Collector-emitter breakdown voltage V I =-1mA, I =0 -80 V (BR)CEO C B Emitter-base breakdown voltage V I =-100 A, I =0 -4 V (BR)EBO E C Co

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