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hy4n60t.pdf Principales características:

hy4n60thy4n60t

HY4N60T / HY4N60FT 600V / 4.0A 600V, RDS(ON)=2.4 @VGS=10V, ID=2.0A N-Channel Enhancement Mode MOSFET Features Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS 1 1 2 2 In compliance with EU RoHs 2002/95/EC Directives G G 3 3 D D S S Mechanical Information TO-220AB ITO-220AB Case TO-220AB / ITO-220AB Molded Plastic Terminals Solderable per MIL-STD-750,Method 2026 2 Drain Marking & Ordering Information TYPE MARKING PACKAGE PACKING 1 Gate Gate HY4N60T 4N60T TO-220AB 50PCS/TUBE Source 3 HY4N60FT 4N60FT ITO-220AB 50PCS/TUBE Absolute Maximum Ratings (TC=25OC unless otherwise noted ) P arameter Symbol HY4N60T HY4N60FT Uni ts D rain-Source Voltage VD S 600 V Gate-Source Voltage VGS +30 V C onti nuous

 

Keywords - ALL TRANSISTORS. Principales características

 hy4n60t.pdf Design, MOSFET, Power

 hy4n60t.pdf RoHS Compliant, Service, Triacs, Semiconductor

 hy4n60t.pdf Database, Innovation, IC, Electricity

 

 
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