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2n3237.pdf Principales características:

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3237 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 90 V VCEO Collector-emitter voltage Open base 90 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 20 A IB Base current 7.5 A PD Total power dissipation TC=25 200 W Tj Junction temperature 150 Tstg Storage temperature -65 200 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 0.875 /W Inchange Semiconduc

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 2n3237.pdf Design, MOSFET, Power

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