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irfp353.pdf Principales características:

isc N-Channel MOSFET Transistor IRFP353 FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage- V = 350V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 350 V DSS V Gate-Source Voltage-Continuous 20 V GS I Drain Current-Continuous 13 A D I Drain Current-Single Pluse 52 A DM P Total Dissipation @T =25 150 W D C Max. Operating Junction Temperature -55 150 T J T Storage Temperature -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Thermal Resistance, Junction to Case 0.7 th

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 irfp353.pdf Design, MOSFET, Power

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