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irfp4310z.pdf Principales características:

irfp4310zirfp4310z

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4310Z IIRFP4310Z FEATURES Static drain-source on-resistance RDS(on) 6.0m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched And High Frequency Circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 120 A D I Drain Current-Single Pulsed 560 A DM P Total Dissipation @T =25 280 W D C T Max. Operating Junction Temperature 175 j Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX U

 

Keywords - ALL TRANSISTORS. Principales características

 irfp4310z.pdf Design, MOSFET, Power

 irfp4310z.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfp4310z.pdf Database, Innovation, IC, Electricity

 

 
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