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spd04n60s5.pdf Principales características:

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isc N-Channel MOSFET Transistor SPD04N60S5,ISPD04N60S5 FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 4.5 A D I Drain Current-Single Pulsed 9 A DM P Total Dissipation @T =25 50 W D C Max. Operating Junction Temperature 150 T j Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(j-c) 2.5 Channel-to-ambient thermal resistance /W Rth(j-a) 62 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark isc N-

 

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 spd04n60s5.pdf Design, MOSFET, Power

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