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spp20n60cfd.pdf Principales características:

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isc N-Channel MOSFET Transistor SPP20N60CFD ISPP20N60CFD FEATURES Static drain-source on-resistance RDS(on) 0.22 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 20.7 A D I Drain Current-Single Pulsed 52 A DM P Total Dissipation @T =25 208 W D C T Max. Operating Junction Temperature 150 j T Storage Temperature -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(ch-c) 0.6 Channel-to-ambient thermal resistance /W Rth(ch-a) 62 1 isc website w

 

Keywords - ALL TRANSISTORS. Principales características

 spp20n60cfd.pdf Design, MOSFET, Power

 spp20n60cfd.pdf RoHS Compliant, Service, Triacs, Semiconductor

 spp20n60cfd.pdf Database, Innovation, IC, Electricity

 

 
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