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bfr193.pdf Principales características:

BFR193 Low Noise Silicon Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR193 RCs SOT23 1 = B 2 = E 3 = C Maximum Ratings at TA = 25 C, unless otherwise specified Parameter Symbol Value Unit 12 V Collector-emitter voltage VCEO 20 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 2 Emitter-base voltage VEBO 80 mA Collector current IC 10 Base current IB 580 mW Total power dissipation1) Ptot TS 69 C 150 C Junction temperature TJ Storage temperature TStg -55 ... 150 Thermal Resistance Parameter Symbol Value Unit K/W Junction

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 bfr193.pdf Design, MOSFET, Power

 bfr193.pdf RoHS Compliant, Service, Triacs, Semiconductor

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