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sgb15n60g.pdf Principales características:

SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 - parallel switching capability Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models http //www.infineon.com/igbt/ Type VCE IC VCE(sat) Tj Marking Package SGB15N60 600V 15A 2.3V G15N60 PG-TO-263-3-2 150 C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current IC A 31 TC = 25 C 15 TC = 100 C Pulsed collector current, tp limited b

Keywords - ALL TRANSISTORS. Principales características

 sgb15n60g.pdf Design, MOSFET, Power

 sgb15n60g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 sgb15n60g.pdf Database, Innovation, IC, Electricity