Todos los transistores

 

sgw10n60a.pdf Principales características:

sgw10n60asgw10n60a

SGP10N60A SGW10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-220-3-1 Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models http //www.infineon.com/igbt/ Type VCE IC VCE(sat) Tj Marking Package SGP10N60A 600V 10A 2.3V G10N60A PG-TO-220-3-1 150 C SGW10N60A 600V 10A 2.3V G10N60A PG-TO-247-3 150 C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector curren

 

Keywords - ALL TRANSISTORS. Principales características

 sgw10n60a.pdf Design, MOSFET, Power

 sgw10n60a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 sgw10n60a.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.