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irf1310ns.pdf Principales características:

irf1310nsirf1310ns

PD - 91514B IRF1310NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS =100V Surface Mount (IRF1310NS) Low-profile through-hole (IRF1310NL) 175 C Operating Temperature RDS(on) = 0.036 G Fast Switching Fully Avalanche Rated ID = 42A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the Pak TO-262 highest power capability and the lowest possible on- D 2 resistance in any existing surface m

 

Keywords - ALL TRANSISTORS. Principales características

 irf1310ns.pdf Design, MOSFET, Power

 irf1310ns.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf1310ns.pdf Database, Innovation, IC, Electricity

 

 
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