irf6100pbf.pdf Principales características:
PD - 96012B IRF6100PbF HEXFET Power MOSFET l Ultra Low RDS(on) per Footprint Area VDSS RDS(on) max ID l Low Thermal Resistance -20V 0.065 @VGS = -4.5V -5.1A l P-Channel MOSFET 0.095 @VGS = -2.5V -4.1A l One-third Footprint of SOT-23 l Super Low Profile (
Keywords - ALL TRANSISTORS. Principales características
irf6100pbf.pdf Design, MOSFET, Power
irf6100pbf.pdf RoHS Compliant, Service, Triacs, Semiconductor
irf6100pbf.pdf Database, Innovation, IC, Electricity
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