irg7ph42ud-ep.pdf datasheet:

PD - 97391B IRG7PH42UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH42UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA IC = 45A, TC = 100 C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diode Tight parameter distribution E VCE(on) typ. = 1.7V Lead-Free n-channel Benefits High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to C C low VCE (ON) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operation E Applications E C C G G U.P.S. TO-247AC TO-247AD Welding IRG7PH42UDPbF IRG7PH42UD-EP Solar Inverter GC E