irg7ph44k10d.pdf datasheet:

IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 40A, TC =100 C tSC 10 s, TJ(max) = 150 C G E C E G C G E VCE(ON) typ. = 1.9V @ IC = 25A IRG7PH44K10DPbF IRG7PH44K10D EPbF n-channel TO 247AC TO 247AD Applications G C E Industrial Motor Drive Gate Collector Emitter UPS Features Benefits Low VCE(ON) and switching losses High efficiency in a Wide Range of Applications 10 s Short Circuit SOA Rugged Transient Performance Square RBSOA Maximum Junction Temperature 150 C Increased Reliability Positive VCE (ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRG7PH44K10DPbF TO-247AC Tube 25 IRG7PH44K10DPbF IRG7PH44K10D-EPbF TO-