2sc6120.pdf Principales características:
2SC6120 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Unit mm OUTLINE DRAWING 2SC6120 is a silicon NPN epitaxial type transistor designed with 2.1 high collector current, low VCE sat . 0.425 1.25 0.425 FEATURE High collector current IC MAX =600mA Low collector to emitter saturation voltage VCE sat
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2sc6120.pdf Design, MOSFET, Power
2sc6120.pdf RoHS Compliant, Service, Triacs, Semiconductor
2sc6120.pdf Database, Innovation, IC, Electricity
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