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rt3p55m.pdf datasheet:

rt3p55mrt3p55m

RT3P55M Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION RT3P55M is compound transistor built with two RT1P144 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit TERMINAL CONNECTOR R1EMITTER1 RTr1BASE1 COLLECTOR2 R2EMITTER2 RTr2 R2BASE2 :COLLECTOR1 R1JEITASC-88 MAXIMUM RATING (Ta=25) (RTr1, RTr2) SYMBOL PARAMETER RATING UNITMARKING Collector to Base voltage -50 V V CBOEmitter to Base voltage -6 V V 6 5 4 EBOCollector to Emitter voltage -50 V V CEOInput voltage -40 V V INP 5 5 Collector current -100 mA

 

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