Todos los transistores

ixgh10n60.pdf Principales características:

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 V High speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings G C E VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V TO-263 AA (IXGA) VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C20 A C (TAB) E IC90 TC = 90 C10 A ICM TC = 25 C, 1 ms 40 A TO-247 AD (IXGH) SSOA VGE= 15 V, TVJ = 125 C, RG = 150 ICM = 20 A (RBSOA) Clamped inductive load, L = 300 H @ 0.8 VCES PC TC = 25 C 100 W C (TAB) G TJ -55 ... +150 C C E TJM 150 C G = Gate, C = Collector, Tstg -55 ... +150 C E = Emitter, TAB = Collector Maximum Lead and Tab temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s Features International standard packages Md Mounting torque, TO-247 AD 1.

Keywords - ALL TRANSISTORS. Principales características

 ixgh10n60.pdf Design, MOSFET, Power

 ixgh10n60.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixgh10n60.pdf Database, Innovation, IC, Electricity