jbe112q.pdf datasheet:

110V, 220A, 2.2m N-channel Power SGT MOSFETJBE112QProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 110 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 220 ARDS(ON)_Typ(@VGS=10V 2.2 mWApplications Load Switch PWM Application Power ManagementDG STO-263-3L Top ViewSchematic DiagramPin AssignmentOrdering InformationPer CartonDevice PackageMarking MSL Form Reel(pcs)(pcs)JBE112Q TO-263-3LBE112Q 3 Tape&Reel 800 4000Absolute Maximum Ratings (@ TC = 25C unless otherwise specified)Parameter ValueSymbol UnitVDS Drain-to-Source Voltage 110 VVGS Gate-to-Source Voltage 20 VTC = 25 220CIDContinuous Drain Current ATC = 100 156CIDM Refer to Fig.4 APulsed Drain Current (1)EAS 1488 mJSingle Pulsed Ava