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jjt60n65uh.pdf datasheet:

jjt60n65uhjjt60n65uh

650V 60A Trench and Field Stop IGBTJJT60N65UHKey performance:TO-3P V =650VCE I =60A@T =100C C V =1.9VCE(sat)Features: Trench and field-stop technology.GC Easy parallel switching capability.EBenefits: High efficiency for inverters. High ruggedness performance. RoHS compliant.Applications: PFC applications Welding machinesPackage parametersType Marking Package Packaging MethodJJT60N65UH T6065UH TO-3P TubeAll product information is copyrighted and subject to legal disclaimers. REV A.1.1 | MAR 20241JJT60N65UHMaximum ratingsSymbol Parameter Values UnitV Collector-emitter voltage 650 VCESV Gate-emitter voltage 20 VGESContinuous collector current (T =25) 120 ACICContinuous collector current (T =100) 60 ACI Pulsed collector current, t limited by T 240 ACM p vjmaxI Di

 

Keywords - ALL TRANSISTORS DATASHEET

 jjt60n65uh.pdf Design, MOSFET, Power

 jjt60n65uh.pdf RoHS Compliant, Service, Triacs, Semiconductor

 jjt60n65uh.pdf Database, Innovation, IC, Electricity

 

 
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