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jmsh0802me.pdf datasheet:

jmsh0802mejmsh0802me

80V, 254A, 1.8m N-channel Power SGT MOSFETJMSH0802MEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 254 ARDS(ON)_Typ(@VGS=10V 1.8 mWApplications Load Switch PWM Application Power ManagementDG STO-263-3LTop ViewSchematic DiagramPin AssignmentOrdering InformationPer CartonDevice PackageMarking MSL Form Reel(pcs)(pcs)JMSH0802ME TO-263-3LSH0802M 3 Tape&Reel 800 4000Absolute Maximum Ratings (@ TC = 25C unless otherwise specified)Parameter ValueSymbol UnitVDS Drain-to-Source Voltage 80 VVGS Gate-to-Source Voltage 20 VTC = 25 254CIDContinuous Drain Current ATC = 100 179CIDM Refer to Fig.4 APulsed Drain Current (1)EAS 1423 mJSingle Pulsed

 

Keywords - ALL TRANSISTORS DATASHEET

 jmsh0802me.pdf Design, MOSFET, Power

 jmsh0802me.pdf RoHS Compliant, Service, Triacs, Semiconductor

 jmsh0802me.pdf Database, Innovation, IC, Electricity

 

 
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