2sc2757.pdf Principales características:
SMD Type Transistors NPN Transistors 2SC2757 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 15 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 50 mA Collector Power Dissipation PC 150 mW Junction Temperature TJ 125 Storage Temperature Range Tstg -55 to 125 Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 A IE= 0 30 Collector- emitter breakdown voltage VCEO Ic= 1mA IB= 0 15 V Emitter - base breakdown voltage VEBO IE= 100 A
Keywords - ALL TRANSISTORS. Principales características
2sc2757.pdf Design, MOSFET, Power
2sc2757.pdf RoHS Compliant, Service, Triacs, Semiconductor
2sc2757.pdf Database, Innovation, IC, Electricity
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BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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