bd136 bd138 bd140.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

bd136 bd138 bd140.pdf Principales características:

BD136/BD138/BD140(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features High Current(-1.5A) Low Voltage(-80V) Dimensions in inches and (millimeters) 2.500 MAXIMUM RATINGS (TA=25 unless otherwise noted) 7.400 2.900 1.100 7.800 1.500 Units Value 3.900 3.000 Symbol Parameter 4.100 3.200 BD135 BD137 BD139 10.600 0.000 11.000 0.300 VCBO Collector-Base Voltage -45 -60 -80 V 2.100 VCEO Collector-Emitter Voltage -45 -60 -80 V 2.300 Emitter-Base Voltage VEBO 1.170 -5 V 1.370 15.300 Collector Current -Continuous IC -1.5 A 15.700 PC Collector power dissipation 1.25 W 0.660 Junction Temperature TJ 150 0.860 0.450 Storage Temperature Tstg -55-150 0.600 2.290 TYP 4.480 4.680 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MA