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2n2906aub.pdf Principales características:

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS JANSM 3K Rads (Si) 2N2906A 2N2907A JANSD 10K Rads (Si) 2N2906AL 2N2907AL JANSP 30K Rads (Si) 2N2906AUA 2N2907AUA JANSL 50K Rads (Si) 2N2906AUB 2N2907AUB JANSR 100K Rads (Si) 2N2906AUBC 2N2907AUBC ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 600 mAdc TO-18 (TO-206AA) 2N2906A, 2N2907A Total Power Dissipation @ TA = +25 C PT (1) 0.5 W Operating & Storage Junction Temperature Range Top, Tstg -65 to

Keywords - ALL TRANSISTORS. Principales características

 2n2906aub.pdf Design, MOSFET, Power

 2n2906aub.pdf RoHS Compliant, Service, Triacs, Semiconductor

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