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2n4036-37 2n4036 2n4037.pdf Principales características:

2n4036-37_2n4036_2n40372n4036-37_2n4036_2n4037

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4036/D General Purpose Transistors PNP Silicon 2N4036 COLLECTOR 2N4037 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N4036 2N4037 Unit Collector Emitter Voltage VCEO 65 40 Vdc 3 2 1 Collector Base Voltage VCBO 90 60 Vdc CASE 79 04, STYLE 1 Emitter Base Voltage VEBO 7.0 7.0 Vdc TO 39 (TO 205AD) Base Current IB 0.5 Adc Collector Current Continuous IC 1.0 Adc Continuous Power Dissipation PD at or Below TC = 25 C 5.0 5.0 Watts Linear Derating Factor 28.6 28.6 mW/ C Continuous Power Dissipation PD at or Below TA = 25 C 1.0 1.0 Watts Linear Derating Factor 5.72 5.72 mW/ C Operating and Storage Junction TJ, Tstg 65 to +200 C Temperature Range Lead Temperature TL 230 C 1/16 from Case for 10 Seconds THERMAL CHARACTERISTICS Characteristic S

 

Keywords - ALL TRANSISTORS. Principales características

 2n4036-37 2n4036 2n4037.pdf Design, MOSFET, Power

 2n4036-37 2n4036 2n4037.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n4036-37 2n4036 2n4037.pdf Database, Innovation, IC, Electricity

 

 

 


 
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