mrf5007r.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

mrf5007r.pdf Principales características:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large signal, common source N CHANNEL amplifier applications in 7.5 Volt portable FM equipment. BROADBAND Guaranteed Performance at 512 MHz, 7.5 Volts RF POWER FET Output Power = 7.0 Watts Power Gain = 10 dB Min Efficiency = 50% Min Characterized with Series Equivalent Large Signal Impedance Parameters S Parameter Characterization at High Bias Levels Excellent Thermal Stability All Gold Metal for Ultra Reliability Capable of Handling 20 1 VSWR, @ 10 Vdc, 512 MHz, 2.0 dB Ov