bc337-25-40.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

bc337-25-40.pdf Principales características:

BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon http //onsemi.com Features These are Pb-Free Devices COLLECTOR 1 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO 45 Vdc 3 EMITTER Collector - Base Voltage VCBO 50 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 800 mAdc Total Device Dissipation @ TA = 25 C PD 625 mW Derate above 25 C 5.0 mW/ C TO-92 CASE 29 Total Device Dissipation @ TC = 25 C PD 1.5 W STYLE 17 Derate above 25 C 12 mW/ C Operating and Storage Junction TJ, Tstg -55 to +150 C 1 1 Temperature Range 2 2 3 3 THERMAL CHARACTERISTICS STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL Characteristic Symbol Max Unit AMMO PACK Thermal Resistance, Junction-to-Ambient RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W MARKING DIAGRAM Stresses excee