bf1101 r wr.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

bf1101 r wr.pdf Principales características:

DISCRETE SEMICONDUCTORS DATA SHEET BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification 1999 May 14 Supersedes data of 1999 Feb 01 NXP Semiconductors Product specification BF1101; BF1101R; N-channel dual-gate MOS-FETs BF1101WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns 4 3 forward transfer admittance to input 1 source capacitance ratio 2 drain Low noise gain controlled amplifier 3 gate 2 up to 1 GHz 2 1 4 gate 1 Partly internal self-biasing circuit to Top view MSB035 ensure good cross-modulation performance during AGC and good DC stabilization. BF1101R marking code NCp. Fig.2 Simplified outline APPLICATIONS (SOT143R). VHF and UHF applications with 3 to 7 V supply voltage, such as television tuners and professional communications equipment. handbook, 2