Todos los transistores

 

bf1107 bf1107w 3.pdf Principales características:

bf1107_bf1107w_3bf1107_bf1107w_3

DISCRETE SEMICONDUCTORS DATA SHEET BF1107; BF1107W N-channel single gate MOS-FETs Product specification 1999 May 14 Supersedes data of 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOS-FETs BF1107; BF1107W FEATURES Currentless RF switch. handbook, halfpage 3 APPLICATIONS Various RF switching applications such as 12 - Passive loop through for VCR tuner Top view MSB003 - Transceiver switching. Marking code S3p. DESCRIPTION Fig.1 Simplified outline SOT23 (BF1107). The BF1107 and BF1107W are depletion type field-effect transistors in SOT23 and SOT323 packages respectively. The low loss and high isolation capabilities of this MOS-FET provide excellent RF switching functions. Integrated diodes between gate and source and between 3 handbook, halfpage gate and drain protect against excessive input voltage 3 surges. Drain

 

Keywords - ALL TRANSISTORS. Principales características

 bf1107 bf1107w 3.pdf Design, MOSFET, Power

 bf1107 bf1107w 3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bf1107 bf1107w 3.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.