bf1107 bf1107w 3.pdf Principales características:
DISCRETE SEMICONDUCTORS DATA SHEET BF1107; BF1107W N-channel single gate MOS-FETs Product specification 1999 May 14 Supersedes data of 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOS-FETs BF1107; BF1107W FEATURES Currentless RF switch. handbook, halfpage 3 APPLICATIONS Various RF switching applications such as 12 - Passive loop through for VCR tuner Top view MSB003 - Transceiver switching. Marking code S3p. DESCRIPTION Fig.1 Simplified outline SOT23 (BF1107). The BF1107 and BF1107W are depletion type field-effect transistors in SOT23 and SOT323 packages respectively. The low loss and high isolation capabilities of this MOS-FET provide excellent RF switching functions. Integrated diodes between gate and source and between 3 handbook, halfpage gate and drain protect against excessive input voltage 3 surges. Drain
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bf1107 bf1107w 3.pdf Design, MOSFET, Power
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