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cmbt2222a.pdf Principales características:

CMBT2222A NPN Silicon Planar Epitaxial Transistors Pin configuration 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit inch (mm) Absolute Maximum Ratings Symbol Value UNIT Collector-base voltage (open emitter) VCBO max 75 V Collector-emmitter voltage (open base) VCEO max 40 V Emmitter base voltage (open collector) VEBO max 6.0 V IC Collector current (d.c.) max 600 mA Total power dissipation up to Ptot max 250 mW Tamb = 25oC D.C. current gain 100 to 300 IC = 150mA; VCE = 10V hFE IC = 500mA; VCE = 10V > 40 Transition frequency at f = 100MHZ fT MHZ > 300 IC = 20mA; VCE = 20V Ratings (at TA = 25oC unless otherwise specified) Limmiting values Symbol Value UNIT Collector-base voltage (open emitter) VCBO max 75 V Collector-emitter voltage (open base) VCEO max 40 V Emitter-base voltage (open collector) VEBO max 6.0 V IC Collector current (d.c.

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