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r07ds0280ej 2sd1306-1.pdf Principales características:

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Preliminary Datasheet R07DS0280EJ0300 2SD1306 (Previous REJ03G0784-0200) Rev.3.00 Silicon NPN Epitaxial Mar 28, 2011 Application Low frequency amplifier, Muting Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 1. Emitter 3 2. Base 3. Collector 1 2 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 5 V Collector current IC 0.7 A Collector power dissipation PC 150 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C R07DS0280EJ0300 Rev.3.00 Page 1 of 5 Mar 28, 2011 2SD1306 Preliminary Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 30 V IC = 10 A, IE = 0 Collector to emitter breakdown volta

 

Keywords - ALL TRANSISTORS. Principales características

 r07ds0280ej 2sd1306-1.pdf Design, MOSFET, Power

 r07ds0280ej 2sd1306-1.pdf RoHS Compliant, Service, Triacs, Semiconductor

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