ruh6080m3-c.pdf datasheet:

RUH6080M3-C N-Channel Advanced Power MOSFET Features Pin Description 60V/80A, RDS (ON) =5.3m (Typ.)@VGS=10V D D D RDS (ON) =6.5m (Typ.)@VGS=4.5V D Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching Loss G Ultra Low On-Resistance S S Excellent QgxRDS(on) product(FOM) S 100% Avalanche Tested PIN1 Lead Free and Green Devices (RoHS Compliant) DFN3030 D Applications DC/DC Converters PD Wireless Charging G On Board Power for Server Synchronous Rectification S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25 C Unless Otherwise Noted) VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage 20 TJ Maximum Junction Temperature 150 C TSTG Storage Temperature Range -55 to 150 C IS Diode Continuous Forward Current TC=25 C 80 A Mounted