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2n2907acsm4r.pdf Principales características:

2n2907acsm4r2n2907acsm4r

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM4R Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Voltage -60V VEBO Emitter Base Voltage -5V IC Continuous Collector Current -600mA PD TA = 25 C Total Power Dissipation at 500mW Derate Above 37.5 C 3.08mW/ C TJ Junction Temperature Range -65 to +200 C Tstg Storage Temperature Range -65 to +200 C THERMAL PROPERTIES (Each Device) Symbols Parameters Max. Units R JA Thermal Resistance, Junction To Ambient 325 C/W Semelab Limited reserves the right to change test conditions, parameter limits and package di

 

Keywords - ALL TRANSISTORS. Principales características

 2n2907acsm4r.pdf Design, MOSFET, Power

 2n2907acsm4r.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n2907acsm4r.pdf Database, Innovation, IC, Electricity

 

 
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