sl13003a1 sl13003a2 sl13003b1 sl13003b2.pdf Principales características:

sl13003a1_sl13003a2_sl13003b1_sl13003b2sl13003a1_sl13003a2_sl13003b1_sl13003b2

SL13003 TO-126 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Power switching applications TO-126 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A 1 . BASE PC Collector Power Dissipation 1.25 W R JA Thermal Resistance from Junction to Ambient 100 /W 2. COLLECTOR Tj Junction Temperature 150 3. EMITTER Tstg Storage Temperature -55 +150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 1mA,IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1mA,IC=0 9 V Collector cut-off current

 

Keywords - ALL TRANSISTORS. Principales características

 sl13003a1 sl13003a2 sl13003b1 sl13003b2.pdf Design, MOSFET, Power

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 sl13003a1 sl13003a2 sl13003b1 sl13003b2.pdf Database, Innovation, IC, Electricity