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ss8050-l ss8050-h ss8050-j.pdf Principales características:

ss8050-l_ss8050-h_ss8050-jss8050-l_ss8050-h_ss8050-j

SS8050 TRANSISTOR(NPN) SOT-23 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100 A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100 A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 A Collector cut-off current ICEO VCB=20V, IE=0 0.1 A Emitter cut-off curre

 

Keywords - ALL TRANSISTORS. Principales características

 ss8050-l ss8050-h ss8050-j.pdf Design, MOSFET, Power

 ss8050-l ss8050-h ss8050-j.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ss8050-l ss8050-h ss8050-j.pdf Database, Innovation, IC, Electricity

 

 
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