tk10q60w.pdf Principales características:

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TK10Q60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK10Q60W TK10Q60W TK10Q60W TK10Q60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.327 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement mode Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 1 Gate 2 Drain (Heatsink) 3 Source IPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) 4. Absolute Maximum Ra

 

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