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ss8050l ss8050h ss8050j.pdf Principales características:

ss8050l_ss8050h_ss8050jss8050l_ss8050h_ss8050j

R UMW UMW SS8050 SOT-23 Plastic-Encapsulate Transistors SOT-23 SS8050 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MARKING Y1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100 A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100 A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 A Collec

 

Keywords - ALL TRANSISTORS. Principales características

 ss8050l ss8050h ss8050j.pdf Design, MOSFET, Power

 ss8050l ss8050h ss8050j.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ss8050l ss8050h ss8050j.pdf Database, Innovation, IC, Electricity

 

 
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