irfr110 sihfr110.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

irfr110 sihfr110.pdf Principales características:

IRFR110, SiHFR110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.54 Repetitive Avalanche Rated Qg (Max.) (nC) 8.3 Surface Mount (IRFR110, SiHFR110) Qgs (nC) 2.3 Available in Tape and Reel Qgd (nC) 3.8 Fast Switching Configuration Single Ease of Paralleling Compliant to RoHS Directive 2002/95/EC D DESCRIPTION DPAK Third generation Power MOSFETs from Vishay provide the (TO-252) designer with the best combination of fast switching, ruggedized device design, low on-resistance and D G cost-effectiveness. The DPAK is designed for surface mounting using vapor S phase, infrared, or wave soldering techniques. Power G S dissipation levels up to 1.5 W are possible in typical surface mount applications. N-Channel